GaAs light-emitting diodes fabricated on Ge-coated Si substrates
- 15 May 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (10), 967-969
- https://doi.org/10.1063/1.94613
Abstract
Light-emitting diodes have been fabricated in GaAs grown by metalorganic chemical vapor deposition on vapor-deposited epitaxial Ge films on Si substrates. The light-emitting junction was formed by zinc diffusion into the n-type GaAs layer. Room-temperature light emission centered at 872 nm has been observed.Keywords
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