Characteristics of GaAs photovoltaic diodes at low irradiance
- 31 October 1969
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (10), 823-826
- https://doi.org/10.1016/0038-1101(69)90059-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Silver-Manganese Evaporated Ohmic Contacts to p-type Gallium ArsenideJournal of the Electrochemical Society, 1968
- Evaporated Ohmic Contacts on GaAsJournal of the Electrochemical Society, 1966
- Use of Low-Temperature Deposited Silicon Dioxide Films As Diffusion Masks in GaAsJournal of the Electrochemical Society, 1964
- Characteristics of High-Conversion-Efficiency Gallium-Arsenide Solar CellsIRE Transactions on Military Electronics, 1962
- Radioactive and Photoelectric p-n Junction Power SourcesJournal of Applied Physics, 1954