MBE Growth of Low Dislocation and High Mobility GaAs-on-Si
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutionsJournal of Crystal Growth, 1983
- Structure of vapor-deposited GaxIn1−xAs crystalsJournal of Applied Physics, 1974