Spin-coated zinc oxide transparent transistors
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- 1 October 2003
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 36 (20), L105-L107
- https://doi.org/10.1088/0022-3727/36/20/l02
Abstract
A ZnO transparent thin-film transistor (TTFT) with a channel layer formed via spin-coating deposition is demonstrated. The TTFT is highly transparent and exhibits n-channel, enhancement-mode behaviour with a channel mobility as large as 0.20 cm2 V−1 s−1 and a drain current on-to-off ratio of nearly 107.Keywords
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