VARIATION OF DRIFT VELOCITY WITH FIELD IN GaAs

Abstract
Solutions of the Boltzmann equation for GaAs have been used to calculate the variation of drift velocity, vd, with field, E. To represent the situation in moderately doped samples with low mobility an additional scattering process has been incorporated into the calculations. The results are in reasonable agreement with deductions about the vd vs E characteristic made from many types of experiments, but in disagreement with the measured vd vs E of Gunn and Elliott.