Generation-recombination noise of Ni-doped Ge in the temperature range 350°–100°K and capture cross-sections of Ni in Ge
- 31 January 1961
- Vol. 27 (1), 48-66
- https://doi.org/10.1016/0031-8914(61)90020-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Carrier density fluctuations in semiconductors and photoconductors with one kind of trapping centersPhysica, 1960
- Infrared Properties of Gold in GermaniumPhysical Review B, 1960
- Recombination Properties of Nickel in GermaniumPhysical Review B, 1959
- Noise in Semiconductors and PhotoconductorsProceedings of the IRE, 1958
- Irreversible Thermodynamics and Carrier Density Fluctuations in SemiconductorsPhysical Review B, 1958
- Recombination of Excess Carriers in SemiconductorsJournal of the Physics Society Japan, 1957
- Annealing of Germanium Supersaturated with NickelPhysical Review B, 1956
- Carrier Capture Probabilities in Nickel Doped GermaniumPhysical Review B, 1955
- Properties of Germanium Doped with NickelPhysical Review B, 1955
- Effect of Nickel and Copper Impurities on the Recombination of Holes and Electrons in GermaniumThe Journal of Physical Chemistry, 1953