Integrated sol-gel PZT thin-films on Pt, Si, and GaAs for non-volatile memory applications
- 1 August 1990
- journal article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 108 (1), 37-46
- https://doi.org/10.1080/00150199008018730
Abstract
Properties of integrated sol-gel PZT thin-films of various Zr/Ti ratios, evaluated as a function of processing parameters, are presented and discussed. The substrate materials for the PZT depositions encompassed Pt, Si, and GaAs. The design, fabrication, and operation of a single PZT element combined with the GaAs JFET planar integrated circuit technology to produce non-volatile programmable random access memories (NVPRAM) are presented.Keywords
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