Polycrystalline thin films of , , and have been prepared in the thickness range from 500 to 4000Aå. The films are obtained by a post‐deposition heat‐treatment of sputtered V or V‐O films. The quality of the films has been studied by x‐ray diffraction techniques and by measuring resistivity as a function of inverse temperature to check the magnitude of the metal to semiconductor transition. Electrically the films compare favorably with bulk crystals, and in addition the films are extremely stable during repeated cycling through the transition temperature.