Semiconductor functional arrayed detector for magnetic-bubble domains

Abstract

A new principle of a magnetic-bubble-domain functional detector employing multiple three-terminal Hall elements is introduced. One- or two-dimensional arrayed detectors were made on this principle with both bulk and evaporated thin films of InSb. Sensitivity of about 10 mV for a 100-G inversion was obtained at a 10-mA element current with negligible offset voltage. An exclusive OR operation of bubble-domain logic was also demonstrated in the detection process.