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Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
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Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
DD
D.V. Davydov
D.V. Davydov
AL
Alexander A. Lebedev
Alexander A. Lebedev
AT
Alla S. Tregubova
Alla S. Tregubova
VK
Vitalii V. Kozlovski
Vitalii V. Kozlovski
AK
Alexey N. Kuznetsov
Alexey N. Kuznetsov
EB
Elena V. Bogdanova
Elena V. Bogdanova
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10 May 2000
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 338-342
,
221-224
https://doi.org/10.4028/www.scientific.net/msf.338-342.221
Abstract
No abstract available
Keywords
CARBON VACANCY
DEEP CENTERS
DLTS
PROTON IRRADIATION
SUBLIMATION HETEROPOLYTYPE EPITAXY
X-RAY TOPOGRAPHY
Cited by 15 articles