Applications of MBE-grown heterostructures and quantum wells in fundamental research and in advanced semiconductor devices
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4), 742-751
- https://doi.org/10.1016/0022-0248(93)90724-b
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Physics and Device Applications of Optical MicrocavitiesScience, 1992
- Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductanceElectronics Letters, 1992
- Spontaneous emission factor of a microcavity DBR surface-emitting laserIEEE Journal of Quantum Electronics, 1991
- InGaAs vertical-cavity surface-emitting lasersIEEE Journal of Quantum Electronics, 1991
- The design and application of III-V multiquantum well optical modulatorsPhysica Scripta, 1991
- Quantum devicesSuperlattices and Microstructures, 1989
- Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperaturesSemiconductor Science and Technology, 1989
- Experimental probing of quantum-well eigenstatesPhysical Review Letters, 1989
- Mobility Modulation of the Two-Dimensional Electron Gas Via Controlled Deformation of the Electron Wave Function in Selectively Doped AlGaAs-GaAs HeterojunctionsPhysical Review Letters, 1985
- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980