Graphical Technique to Determine the Density of Surface States at the Si-SiO[sub 2] Interface of MOS Devices Using the Quasistatic C-V Method
- 1 January 1973
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 120 (12), 1785
- https://doi.org/10.1149/1.2403366