Growth of Cd1−xMnxTe films with 0<x<0.9 by atomic layer epitaxy
- 15 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6), 646-648
- https://doi.org/10.1063/1.95342
Abstract
Thin Cd1−xMnxTe semiconductor films with x ranging from 0 to 0.9 have been grown on CdTe (111) substrates using the atomic layer epitaxy method. The films grow epitaxially at all concentrations and show no manganese interdiffusion. The films are characterized by low‐energy electron diffraction, Auger electron spectroscopy and angle‐resolved UV photoemission.Keywords
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