Longitudinal Magnetoresistance in Polar Semiconductors: A Displaced-Maxwellian Analysis

Abstract

The displaced-Maxwellian distribution function is used to study longitudinal magnetoresistance in polar semiconductors, when several carrier scattering mechanisms are simultaneously active. Although both the $B=0\mathrm{}$ and the quantum-limit expressions for the resistance are largely the same as those obtained from the Boltzmann equation, numerical calculations show that the displaced Maxwellian is unable to account for longitudinal magnetoresistance minima often observed in the magnetophonon structure of polar materials. In the hot-electron regime, the displaced Maxwellian can give maxima or minima, depending upon lattice temperature and type of scattering mechanisms.