Epitaxial NiSi2 formation by pulsed laser irradiation of thin Ni layers deposited on Si substrates
- 1 August 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3), 244-246
- https://doi.org/10.1063/1.94313
Abstract
Pulsed laser irradiation was used to induce silicide formation in Ni thin layer deposited onto Si substrates of 〈100〉 and 〈111〉 orientation, respectively. Suitable energy densities of the 30‐ns Nd glass laser pulse produced epitaxial NiSi2 silicide for a 15‐nm‐thick Ni layer. Irradiation of thicker metal films formed instead several silicides of nonuniform composition.Keywords
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