Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

Abstract
Room temperature, pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting laser is demonstrated by the optimization of an InGaAs/InGaAsP multi-quantum well active layer, especially the number of quantum wells and the barrier thickness considering matched gain effect. Low threshold currents of 17 mA in 5/spl times/7 /spl mu/m/sup 2/-devices and 25 mA in 7/spl times/10 /spl mu/m/sup 2/-devices were achieved.