Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (3), 317-319
- https://doi.org/10.1109/68.275476
Abstract
Room temperature, pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting laser is demonstrated by the optimization of an InGaAs/InGaAsP multi-quantum well active layer, especially the number of quantum wells and the barrier thickness considering matched gain effect. Low threshold currents of 17 mA in 5/spl times/7 /spl mu/m/sup 2/-devices and 25 mA in 7/spl times/10 /spl mu/m/sup 2/-devices were achieved.Keywords
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