Photochemical vapour deposition of phosphorus nitride using an ArF excimer laser

Abstract

The photochemical deposition of phosphorus nitride film on InP substrates using an ArF excimer laser (wavelength = 193 nm) to decompose a mixture of PH3-NH3 gases and synthesise the film is presented. The deposition temperature can be reduced from 480°C used in the thermal-CVD technique to 300°C. The film deposited photochemically exhibits a much larger resistivity and lower leakage current than that obtained by the thermal-CVD technique at 300°C. The minimum interface state density measured by C/V curves is 1012 eV−l cm−2 at (Ec − 0.3) eV.