Excimer-laser-induced crystallization of hydrogenated amorphous silicon
- 19 November 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (21), 2222-2224
- https://doi.org/10.1063/1.103897
Abstract
The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.Keywords
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