Measurement of Minority Carrier Lifetimes in Semiconductors
- 1 August 1955
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society. Section B
- Vol. 68 (8), 562-563
- https://doi.org/10.1088/0370-1301/68/8/411
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- On the Measurement of Minority Carrier Lifetime in n-Type SiliconProceedings of the Physical Society. Section B, 1955
- Measurement of Carrier Lifetimes in Germanium and SiliconJournal of Applied Physics, 1955
- Current Multiplication Processes in n-Type Germanium Point-Contact TransistorsProceedings of the Physical Society. Section B, 1954
- Measurement of Minority Carrier Lifetime and Contact Injection Ratio on Transistor MaterialsProceedings of the Physical Society. Section B, 1954
- Enhanced Alpha in Formed Silicon Point Contact TransistorsJournal of Applied Physics, 1953
- Recombination Rate in Germanium by Observation of Pulsed Reverse CharacteristicPhysical Review B, 1953
- The Drift Mobility of Electrons in SiliconPhysical Review B, 1952
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951
- Measurement of Hole Diffusion in-Type GermaniumPhysical Review B, 1951