Low (2.0 kA/cm2) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15° off (100) GaAs substrates

Abstract

Very low threshold current density operation of 630 nm wavelength range GalnP/AllnP multiquantum well (MQW) lasers grown by gas source molecular beam epitaxy has been achieved. The reduction of threshold current density Jth was obtained by use of 15° off (100) toward [011] GaAs substrates, with a minimum Jth of 2.0 kA/cm2 at 629 nm. The Jth of the lasers grown on the exact oriented (100) substrates was 2.9 kA/cm2 at minimum, which was about 1.4 times larger than the above value.