Optimum emitter grading for heterojunction bipolar transistors
- 15 November 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (10), 949-951
- https://doi.org/10.1063/1.94192
Abstract
A simple procedure has been used to determine the optimum emitter grading for a heterojunction bipolar transistor (ABT). Use of this procedure allows maximum hole confinement in addition to minimum base/emitter turn‐on voltage, leading to a negligible collector/emitter offset voltage, both of which are necessary for high performance devices. By using a parabolic grading function at the emitter/base junction a Np+n Ga0.7Al0.3As/GaAs HBT has been fabricated, using molecular beam epitaxy, with a negligible collector/emitter offset voltage. A similar result can be obtained with a N‐i emitter where the undoped i region is linearly graded.Keywords
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