Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electron beam system for rapid isothermal annealing of semiconductor materials and devicesReview of Scientific Instruments, 1985
- Modeling Rapid Thermal Diffusion of Arsenic and Boron in SiliconJournal of the Electrochemical Society, 1984
- Simulation of doping processesIEEE Transactions on Electron Devices, 1980
- Interactions in Sequential Diffusion Processes in SemiconductorsJournal of Applied Physics, 1968