Picosecond GaAs photoconductors on silicon substrates for local integration with silicon devices and circuits

Abstract

A fabrication procedure for local integration of GaAs photoconductive devices with processed silicon circuits is discussed. The process allows isolated regions of GaAs to be epitaxially grown by MBE at temperatures which are compatible with already processed silicon circuits with first-level metallization. GaAs photoconductors with 15- mu m gap lengths fabricated on silicon substrates have exhibited >16-mA sampling-oscilloscope-limited responses, with electrical pulse widths less than 20 ps as determined by autocorrelation measurements.