Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
- 7 December 2011
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 84 (24)
- https://doi.org/10.1103/physrevb.84.245302
Abstract
Based on the breakdown of Friedel's law, resonant x-ray diffraction is shown to be a suitable method to determine polarity of non-centrosymmetrical wurtzite gallium nitride (GaN) nanowires (NWs) at a macroscopic scale. It is demonstrated that such GaN NWs grown by plasma-assisted molecular beam epitaxy on bare Si(111) are N-polar, consistent with results obtained by convergent beam electron diffraction. The N-polarity feature is attributed to the formation of a thin SixN1--x layer on the Si surface before growth. The use of a thin AlN buffer layer does not modify the GaN NW polarities, suggesting that NWs actually grow between the AlN grains rather than on top of them.Keywords
This publication has 45 references indexed in Scilit:
- Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBENanotechnology, 2011
- Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxyJournal of Applied Physics, 2011
- The structural properties of GaN/AlN core–shell nanocolumn heterostructuresNanotechnology, 2010
- Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface statesPhysical Review B, 2010
- Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowiresPhysical Review B, 2009
- Fundamental limits to power consumption of LC subthreshold oscillatorsElectronics Letters, 2008
- Characteristics of the GaN Polar Surface during an Etching Process in KOH Solutionphysica status solidi (a), 2000
- The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)Journal of Crystal Growth, 1998
- Polarity of (00.1) GaN epilayers grown on a (00.1) sapphireApplied Physics Letters, 1997
- Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997