The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
- 1 January 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 183 (1-2), 23-30
- https://doi.org/10.1016/s0022-0248(97)00386-2
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Exciton fine structure in undoped GaN epitaxial filmsPhysical Review B, 1996
- High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction PatternsJapanese Journal of Applied Physics, 1996
- Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma sourceJournal of Crystal Growth, 1995
- GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layersApplied Physics Letters, 1995
- Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxyJournal of Crystal Growth, 1995
- Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxyApplied Physics Letters, 1995
- Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen SourceJapanese Journal of Applied Physics, 1995
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layerJournal of Crystal Growth, 1993
- Growth of GaN and AlGaN for UV/blue p-n junction diodesJournal of Crystal Growth, 1993