The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
- 1 January 1998
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 183 (1-2), 23-30
- https://doi.org/10.1016/s0022-0248(97)00386-2
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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