LPE growth of 1.3 μm InGaAsP CW lasers on (110) InP substrates

1 January 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (8), 282-283
https://doi.org/10.1049/el:19810198

Abstract

Room temperature CW operation and threshold current densities below 1000 A/cm2 have been achieved near 1.3 μm wavelength with InP/InGaAsP/InP DH lasers grown by liquid phase epitaxy on (110)-oriented InP substrates.

Keywords

INGAASP-INP CW LASERS
III-V SEMICONDUCTORS
LPE

Cited by 2 articles