A formalism for the indirect Auger effect. I

Abstract

A general formalism has been developed for the calculation of band-band Auger recombination and impact ionization rates in diamond and zinc blende type structures. The energy gap involved in the transition must be of order 1 eV or greater, at room temperature, for direct gaps but is arbitrary for indirect gaps. A recombination coefficient of 28.1 $\times $ 10$^{-32}$ cm$^{6}$ s$^{-1}$ for GaP (hole-hole-electron collision) has been obtained in reasonable agreement with experiment. The formalism gives better theoretical values for Ge and Si than so far available. This has tended to reduce the recombination rates expected theoretically.