Use of microwave techniques for measuring carrier lifetime and mobility in semiconductors
- 31 May 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5), 417-423
- https://doi.org/10.1016/0038-1101(69)90099-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Microwave Techniques in Measurement of Lifetime in GermaniumJournal of Applied Physics, 1959
- Decay of Excess Carriers in SemiconductorsPhysical Review B, 1958
- Transient Recombination of Excess Carriers in SemiconductorsPhysical Review B, 1958
- The Forward Characteristic of the Pin DiodeBell System Technical Journal, 1956