Design of multiplexer in amorphous silicon technology
- 1 May 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 20 (3), 1043-1047
- https://doi.org/10.1116/1.1474413
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The Instability Mechanisms of Hydrogenated Amorphous Silicon Thin Film Transistors under AC Bias StressJapanese Journal of Applied Physics, 2000
- Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal DisplaysJapanese Journal of Applied Physics, 1998
- X‐ray imaging using amorphous selenium: Feasibility of a flat panel self‐scanned detector for digital radiologyMedical Physics, 1995
- Instability mechanisms for the hydrogenated amorphous silicon thin-film transistors with negative and positive bias stresses on the gate electrodesApplied Physics Letters, 1995
- Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistorsApplied Physics Letters, 1989
- Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistorsApplied Physics Letters, 1987