Energy Levels of Donor and Acceptor Dopants and Electron and Hole Mobilities in α‐Al2O3
- 1 January 1980
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 63 (1-2), 31-32
- https://doi.org/10.1111/j.1151-2916.1980.tb10642.x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Generation, transport, and trapping of excess charge carriers in Czochralski-grown sapphirePhysical Review B, 1979
- High‐Temperature Defect Structure of Iron‐Doped α‐AluminaJournal of the American Ceramic Society, 1975
- The Hall effect and magnetoresistance of alumina single crystalsJournal of Physics D: Applied Physics, 1975
- Charge-Transfer Spectra of Transition-Metal Ions in CorundumPhysical Review B, 1970