Photo-induced infra-red absorption in doped silicon
- 1 March 1965
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 26 (3), 563-573
- https://doi.org/10.1016/0022-3697(65)90132-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960
- One-Dimensional Impurity BandsPhysical Review B, 1958
- Radiation Resulting from Recombination of Holes and Electrons in SiliconPhysical Review B, 1956
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Optical Investigations of Impurity Levels in SiliconThe Journal of Physical Chemistry, 1953