Electronic energy structure of SiO2: An application of the recursion method
- 30 June 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 58 (10), 705-708
- https://doi.org/10.1016/0038-1098(86)90506-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Band structures of all polycrystalline forms of silicon dioxidePhysical Review B, 1985
- Electronic band structure of stishovite (tetragonal Si)Physical Review B, 1983
- Theory of defects in vitreous silicon dioxidePhysical Review B, 1983
- Electronic structure of SiO2(111) thin filmSolid State Communications, 1981
- Bulk electronic structure of SiPhysical Review B, 1979
- Electronic-energy-structure calculations of silicon and silicon dioxide using the extended tight-binding methodPhysical Review B, 1977
- Electron states in-quartz: A self-consistent pseudopotential calculationPhysical Review B, 1977
- Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphousandPhysical Review B, 1976
- Photoemission Measurements of the Valence Levels of Amorphous SiPhysical Review Letters, 1971