Temperature and strain dependences of electrical resistance of Ni-Si-B amorphous alloys

Abstract

Ni‐Si‐B amorphous alloys were prepared from the melt by a rapid quenching method in order to investigate the temperature and strain dependences of electrical resistance. The room‐temperature coefficient of electrical resistance becomes very small in a wide temperature range by adjusting the metalloid content, and its sign changes around the total conduction electron C_E≊1.5 with the resistivity ρ≊150 μΩ cm. A linear relationship between the strain and the change in the electrical resistance is observed, and the strain gauge factor is estimated to be about 2.0. In addition, the electrical resistivity of these amorphous alloys is much higher than that of conventional strain gauge alloys, and shows no anisotropy in magnetic fields because they are paramagnetic. From these results, it is concluded that Ni‐Si‐B amorphous alloys are suitable for applications to strain gauge materials.