Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon
- 1 February 1986
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 1 (1), 155-161
- https://doi.org/10.1557/jmr.1986.0155
Abstract
Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.Keywords
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