Detailed Study of Si-H Stretching Modes in µc-Si: H Film through Second Derivative IR Spectra
- 1 July 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (7A), L491
- https://doi.org/10.1143/jjap.24.l491
Abstract
Infrared absorption (IR) spectra corresponding to stretching modes of Si-H bondings in hydrogenated Si microcrystalline (µc-Si:H) film with such structures as SiH, SiH2, SiH3 and \rlap (–SiHm\rlap)–n [chain-like] were studied in detail by taking the second derivative modes. Two absorption peaks due to SiH on Si(111) and Si(110) surfaces of the microcrystalline grains in the film, respectively, near 2100 cm-1 were clarified and the presence of both the symmetric and asymmetric modes of stretching in SiH2 on Si(100) and SiH3 on Si(111) and Si(110) surfaces was assigned successfully.Keywords
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