Electrical Oscillations in Silicon Compensated with Deep Levels
- 1 April 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (5), 2009-2013
- https://doi.org/10.1063/1.1708661
Abstract
Recent studies of electrical oscillations in silicon compensated with deep lying impurity levels are described. Factors affecting these oscillations such as sample resistivities and geometrical configurations, field strengths, current densities, and illumination are discussed. It is found that there are two possible oscillation mechanisms.Keywords
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