Atomic configuration of hydrogenated and clean Si(110) surfaces
- 15 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (4), 2329-2335
- https://doi.org/10.1103/physrevb.34.2329
Abstract
Step structure models for hydrogenated and clean Si(110) surfaces are proposed by kinematical analysis of low-energy electron diffraction patterns. The step structures are described as periodically up and down sequence of terraces with [1¯ 1¯ 2] step boundaries and the step height is within ±5% of the bulk Si(110) layer spacing. The number of Si atoms on each terrace along a [110] direction is 8±1.Keywords
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