Microscopic and optical investigation of Ge nanoislands on silicon substrates
- 18 January 2002
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 13 (1), 81-85
- https://doi.org/10.1088/0957-4484/13/1/318
Abstract
We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.Keywords
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