Impurity conduction in quenched p-type silicon
- 16 August 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 2 (4), 803-808
- https://doi.org/10.1002/pssa.19700020417
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Diffusion Mechanisms and Point Defects in Silicon and GermaniumPhysica Status Solidi (b), 1968
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967
- Quenched-In Defects in p-Type SiliconJournal of Applied Physics, 1964
- The theory of impurity conductionAdvances in Physics, 1961
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957
- Vacancies and interstitials in germanium and siliconActa Metallurgica, 1956
- Resistivity changes in silicon single crystals induced by heat treatmentActa Metallurgica, 1955