Radiation Annealing of GaAs Implanted with Si
- 1 February 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (2), L124
- https://doi.org/10.1143/jjap.20.l124
Abstract
The use of radiation from halogen lamps to anneal implanted GaAs has been studied. Semi-insulating GaAs wafers implanted with 3×1012 cm-2 silicon at 70 keV were completely activated by 5 seconds rediation with or without encapsulation. The wafer temperature reached 950°C. This annealing method minimizes the thermal conversion of semi-insulating GaAs wafers.Keywords
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