Low-dose n-type ion implantation into Cr-doped GaAs substrates
- 31 March 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (3), 273-276
- https://doi.org/10.1016/0038-1101(77)90198-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Impurity gettering in semi-insulating gallium arsenide using ion-implantation damageApplied Physics Letters, 1976
- High-efficiency ion-implanted lo-hi-lo GaAs IMPATT diodesApplied Physics Letters, 1976
- Exact circuit design using inefficient c.t.d.sElectronics Letters, 1976
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Ion-implanted microwave field-effect transistors in GaAsSolid-State Electronics, 1975
- GaAs planar Gunn digital devices by sulphur-ion implantationElectronics Letters, 1975