Growth and properties of InxGa1−xN/AlyGa1−yN multiquantum wells developed by molecular beam epitaxy

Abstract

In_0.09Ga_0.91N/GaN and In_0.35Ga_0.65N/Al_0.1Ga_0.9N multiquantum well structures (MQW) were grown by molecular beam epitaxy on (0001) sapphire substrates. The thickness of the wells and the barriers were in the range of 80–120 Å. The microstructure of these MQW structures was investigated by transmission electron microscopy. The room temperature photoluminescence spectra in these MQW structures peak at 387 and 463 nm with full width at half maximum of 16 and 28 nm, respectively.