Molecular beam epitaxy of nitride thin films
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4), 136-142
- https://doi.org/10.1016/0022-0248(93)90592-k
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Growth of GaN(0001)1×1 on Al2O3(0001) by gas-source molecular beam epitaxyApplied Physics Letters, 1992
- Prospects for device implementation of wide band gap semiconductorsJournal of Materials Research, 1992
- Crystal growth of gallium nitrideProgress in Crystal Growth and Characterization, 1988
- Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbideMaterials Science and Engineering B, 1988
- Epitaxial growth of GaN/AlN heterostructuresJournal of Vacuum Science & Technology B, 1983
- Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substratesApplied Physics Letters, 1983
- Low Temperature Growth of Gallium NitrideJapanese Journal of Applied Physics, 1981
- Reactive molecular beam epitaxy of aluminium nitrideJournal of Vacuum Science and Technology, 1979
- Luminescence in GaNJournal of Luminescence, 1973