Field effect on planar devices made of epitaxial manganite perovskites
- 15 June 2004
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 95 (12), 8079-8086
- https://doi.org/10.1063/1.1753086
Abstract
Planar side gate devices are fabricated with epitaxial perovskite oxides by means of the voltage biased tip of an atomic force microscope. The high performance of the insulating gate barriers as well as the high dielectric permittivity of the chosen substrate are exploited to obtain a remarkable value of accumulated/depleted charge. We fabricate field effect devices having a channel on a substrate. By applying a gate voltage of +/−60 V we observe a modulation of the manganite channel resistance up to 150% at low temperatures. Furthermore, a field effect induced reversible shift by 3.2 K of the metal-insulator transition temperature is observed. This technology for prototype devices based on epitaxial oxides opens perspectives in oxide electronics applications.
Keywords
This publication has 37 references indexed in Scilit:
- CuPc/PbZr0.2Ti0.8O3/(La,Ba)MnO3 field effect transistor heterojunction photomemorySolid-State Electronics, 2003
- Reversible shift of the transition temperature of manganites in planar field-effect devices patterned by atomic force microscopeApplied Physics Letters, 2003
- Anomalous strain effect inepitaxial thin film: Role of the orbital degree of freedom in stabilizing ferromagnetismPhysical Review B, 2001
- p–n diode with hole- and electron-doped lanthanum manganitesApplied Physics Letters, 2001
- First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting OxidesJapanese Journal of Applied Physics, 1999
- Modification of YBa2Cu3O7−δ wires using a scanning tunneling microscope: Process and electrical transport effectsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Two-dimensional growth of atomically smooth YBCO epitaxial films deposited by PLD in a pulsed oxygen flowSuperconductor Science and Technology, 1998
- Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O FilmsScience, 1994
- SrTi: An intrinsic quantum paraelectric below 4 KPhysical Review B, 1979
- Electrical conductivity of ferromagnetic compounds of manganese with perovskite structurePhysica, 1950