Very Short Wavelength (621.4 nm) Room Temperature Pulsed Operation of InGaAsP Lasers
- 1 August 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (8A), L488
- https://doi.org/10.1143/jjap.21.l488
Abstract
InGaAsP/InGaAsP double-heterostructure laser diodes with wavelength as short as 621.4 nm at room temperature were demonstrated and their growth conditions were described. The laser diodes were constructed by InGaAsP grown on GaAs0.61P0.39 substrates by liquid phase epitaxy. Their threshold current densities were approximately 1.19×105 A/cm2 in pulsed room temperature operation.Keywords
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