Back-surface emitting GaAsxSb1−x LED’s (λ=1.0 μm) prepared by molecular-beam epitaxy
- 15 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (8), 397-399
- https://doi.org/10.1063/1.89418
Abstract
Compositionally graded layers of GaAsxSb1−x have been grown on GaAs substrates by molecular‐beam epitaxy. Planar Zn‐diffused 50‐μm‐diam light‐emitting diodes have been prepared in GaAs0.9Sb0.1. The 1.0‐μm wavelength emission was taken out through the transparent GaAs substrate, and for a pulsed current of 100 mA, the external quantum efficiency was 0.1%.Keywords
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