Temperature Dependence of the Phonons of Bulk AlN
- 1 July 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (7B), L710-712
- https://doi.org/10.1143/jjap.39.l710
Abstract
Micro-Raman scattering measurements were performed on bulk wurtzite AlN crystals over a temperature range from 10 K to 1275 K. The temperature dependence of the frequency of the AlN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of the E2phonon of -(2.22±0.02)×10-2cm-1/K was determined for high temperatures, which is similar to values reported for bulk GaN. The results provide the basis for the non-invasive monitoring of the temperature of (Al,Ga)N by Raman scattering.Keywords
This publication has 14 references indexed in Scilit:
- Temperature dependence of Raman scattering in single crystal GaN filmsApplied Physics Letters, 1999
- AlGaN/GaN quantum well ultraviolet light emitting diodesApplied Physics Letters, 1998
- Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutionsApplied Physics Letters, 1998
- Zone-boundary phonons in hexagonal and cubic GaNPhysical Review B, 1997
- Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopySolid State Communications, 1995
- Polarized Raman spectra in GaNJournal of Physics: Condensed Matter, 1995
- Raman scattering from LO phonon-plasmon coupled modes in gallium nitrideJournal of Applied Physics, 1994
- Vibrational Spectroscopy of Aluminum NitrideJournal of the American Ceramic Society, 1993
- Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and: Anharmonic effectsPhysical Review B, 1984
- The Raman effect in crystalsAdvances in Physics, 1964