NDRO Magnetic Film Memory Mode Using Creep and Boundary Displacement Switching
- 1 March 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (3), 762-763
- https://doi.org/10.1063/1.1713465
Abstract
A new switching technique for thin magnetic films of Permalloy was investigated. Orthogonal ac fields were used instead of the usual pulse switching fields. Two variations of the transverse field were tried with ω=2π×106 rad/sec: hT=HT½(1−cosωt) and hT=HTsin(ω/2)t. The longitudinal fields (easy direction) were hL=+HL cosωt or −HL cosωt; hL or −hL was used depending on which remenant magnetic state of the film was desired. The time display of the vector sum (Liassajou pattern) of hT and hL formed a straight line or a parabola for the two transverse drive methods. With the correct combinations of hT and hL, the film would switch with both fields applied but would retain the previous state with only one of the two applied. The state of the film was detected by applying the nondestructive hT and observing the phase of the output from a sense winding. This switching mode appears to have utility in large, word organized memories.Keywords
This publication has 1 reference indexed in Scilit:
- The Parametron, a Digital Computing Element Which Utilizes Parametric OscillationProceedings of the IRE, 1959