Resolution of the a-Si:H DLTS energy scale controversy
- 1 July 1984
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 66 (1-2), 217-222
- https://doi.org/10.1016/0022-3093(84)90323-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Temperature dependence of electron-capture cross section of localized states inPhysical Review B, 1983
- Energy dependence of electron-capture cross section of gap states in-type-Si:HPhysical Review B, 1982
- Identification of the Dangling-Bond State within the Mobility Gap of-Si: H by Depletion-Width-Modulated ESR SpectroscopyPhysical Review Letters, 1982