Fast photoconductive optoelectronic broadband switch with low control voltage

Abstract

Optoelectronic switching with a gallium arsenide field-effect transistor used as a photoconductive detector is demonstrated. On-state to off-state isolation ratios of 65 dB from 500 kHz to 1.3 GHz, and switching times less than 10 ns, are observed. Gating voltage is of the order of 3–10 V.